H. Kurakake

Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate

H. Shōji, T. Uchida, T. Kusunoki et al. · IEEE Photonics Technology Letters · 1994 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

1.3 µm InGaAs/GaAs strained quantum well laserswith InGaP cladding layer

T. Uchida, H. Kurakake, H. Soda et al. · Electronics Letters · 1994 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate

T. Uchida, H. Kurakake, H. Soda et al. · Journal of Electronic Materials · 1996 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers

H. Kurakake, T. Uchida, Tsuyoshi Yamamoto et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers

Tatsuya Higashi, S. Ogita, H. Soda et al. · IEEE Journal of Quantum Electronics · 1993 · 11 citations

Engineering, Orthodontics, Cavity Preparation +16