Electronics Letters · 1994 · 21 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum OptoelectronicsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringCurrent DensityLasersQuantum Well GainQuantum Well HeterostructuresQuantum Well LasersSemiconductor Laser DiodesStrained Layer StructuresStrained Quantum Wells
Using MOVPE, we fabricated strained quantum well 1.3 µm lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60 cm-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm2, and a high characteristic temperature of 100 K.
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