Effects of ozone treatment of 4H–SiC(0001) surface

ARXPS studies of SiO₂-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(00<ovl>1</ovl>) surfaces

B. Hornetz, H-J. Michel, J. Halbritter · Journal of materials research/Pratt's guide to venture capital sources · 1994 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14

Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

X.-J. Zhang, G. Xue, Ankur Agarwal et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 133 citations

Natural Sciences, Materials Engineering, Materials Science +15

Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning

V. V. Afanas’ev, A. Stesmans, Gerhard Pensl et al. · Applied Physics Letters · 1996 · 120 citations

Natural Sciences, Materials Engineering, Materials Science +17

The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K

James M. Powers, Gábor A. Somorjai · Surface Science · 1991 · 59 citations

Natural Sciences, Materials Engineering, Materials Science +14

Vital Issues for SiC Power Devices

Kazukuni Hara · Materials science forum · 1998 · 52 citations

Engineering, Electrical Engineering, Materials Science +14