Nucleation effects during MBE growth of Sn-Doped GaAs

Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

J. J. Harris, B.A. Joyce, Peter J. Dobson · Surface Science · 1981 · 365 citations

Natural Sciences, Materials Engineering, Materials Science +14

Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

J.H. Neave, B.A. Joyce · Journal of Crystal Growth · 1978 · 186 citations

Engineering, Materials Engineering, Materials Science +14

Cohesive energy of the two-dimensional Si(111)3 × 1 Ag and Si(111)√3-R(30°)Ag phases of the Silver (deposit)-silicon(111) (substrate) system

G. LeLay, M. Manneville, R. Kern · Surface Science · 1978 · 182 citations

Natural Sciences, Materials Engineering, Materials Science +11

Tin-doping effects in GaAs films grown by molecular beam epitaxy

C. E. C. Wood, B.A. Joyce · Journal of Applied Physics · 1978 · 180 citations

Natural Sciences, Materials Science, Physics +17

Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy

A. Y. Cho · Journal of Applied Physics · 1975 · 162 citations

Engineering, Materials Engineering, Materials Science +17