Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture

The science and engineering of microelectronic fabrication

Choice Reviews Online · 1996 · 648 citations

Engineering, Materials Engineering, Materials Science +17

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

S. K. Ray, C. K. Maiti, S. K. Lahiri et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 95 citations

Natural Sciences, Materials Engineering, Materials Science +17

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

H.-J. Schliwinski, Uwe Schnakenberg, W. Windbracke et al. · Journal of The Electrochemical Society · 1992 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds

Yasushi Inoue, Osamu Takai · Plasma Sources Science and Technology · 1996 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +15

Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

C.E. Viana, Ana N. R. da Silva, Nilton Itiro Morimoto et al. · Brazilian Journal of Physics · 2001 · 32 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17