Low-threshold, highly reliable 630 nm-band AlGaIPvisible laser diodes with AlInP buried waveguide

Abstract

Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have been developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current of 19 mA at 25°C is obtained with a cavity length of 310 µm. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 µm operated over 7000 h without significant degradation at 60°C and 5 mW.