Applied Physics Letters · 2006 · 35 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsLuminescent MaterialsOptoelectronic MaterialsRare-earth-doped MaterialsSemiconductor Device MaterialsWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsPhosphor ConversionPhosphor MaterialsPhotoluminescencePhotoluminescence SpectroscopyRare-earth-doped Luminescent MaterialsWetting
A high yield process to produce gallium nitride (GaN) powder doped with europium (Eu) is presented. Eu is in situ incorporated into GaN powder through the reaction between a molten alloy of Ga and Eu along with NH3 at 1000 °C using Bi as a wetting agent. This procedure provides a method to produce a GaN:Eu phosphor with high yield and low cost. Room temperature photoluminescence (PL) measurements are studied on GaN:Eu powders with different Eu concentrations. The maximum PL intensity is obtained at a Eu concentration of 1.25 at. %. Cathodoluminescence spectra at room temperature exhibit many detailed transitions in the 530–630 nm range.
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