Publication | Closed Access
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics
15
Citations
14
References
2001
Year
Materials EngineeringElectrical EngineeringEngineeringBase Layer ThicknessNanoelectronicsBias Temperature InstabilityDevice ReliabilityApplied PhysicsTime-dependent Dielectric BreakdownSemiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsElectrical Insulation
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