Yoshinao Harada - Concepedia

Author

Yoshinao Harada

Panasonic (Japan)

Also Known As

Yoshinao Harada

Publications

319

Citations

H-Index

Concepts

All Affiliations

Panasonic (Japan)Panasonic (Poland)Niigata University

About

Yoshinao Harada is an author at Panasonic (Japan) specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	296
2	Applied Physics	6	6	191
3	Electrical Engineering	4	4	146
4	Chemistry	3	3	122
5	Chemical Engineering	2	2	105

Yoshinao Harada

Publications

296

Citations

H-Index

Page 1

	Year	Citations
Selective Exchange and Fixation of Strontium Ions with Ultrafine Na-4-mica Tatsuya Kodama, Yoshinao Harada, Masahito Ueda, Langmuir Materials ScienceInorganic ChemistryChemical EngineeringSolid-state IonicSelective Exchange	2001	86
Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications Jong Jin Lee, Yoshinao Harada, Jung Woo Pyun, Applied Physics Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringNanomaterials	2005	75
Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides Koji Eriguchi, Yoshinao Harada, M. Niwa Journal of Applied Physics EngineeringSio2–si InterfaceSemiconductor DeviceSemiconductorsOxide Heterostructures	2000	37
Impact of Structural Strained Layer near SiO<sub>2</sub>/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown Yoshinao Harada, Koji Eriguchi, M. Niwa, Japanese Journal of Applied Physics Materials ScienceOxide HeterostructuresSemiconductorsEngineeringCrystalline Defects	2000	28
Crystal-size control and characterization of Na-4-mica prepared from kaolinite Tatsuya Kodama, Yoshinao Harada, Masahito Ueda, Journal of Materials Chemistry Materials ScienceInorganic ChemistryChemical EngineeringMagnetic PropertiesEngineering	2001	19
Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN<sub>x</sub> Gate Formation Masaru Moriwaki, Takayuki Yamada, Yoshinao Harada, Japanese Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringMetal Gate Process	2000	19
Initial Stage of Oxidation of Si(001)-2×1 Surface Studied by X-Ray Photoelectron Spectroscopy Yoshinao Harada, M. Niwa, T. Nagatomi, Japanese Journal of Applied Physics EngineeringOxidation ResistanceChemistrySilicon On InsulatorOxidation Process	2000	17
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics Koji Eriguchi, Yoshinao Harada, M. Niwa Microelectronics Reliability Materials EngineeringElectrical EngineeringEngineeringBase Layer ThicknessNanoelectronics	2001	15

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