A method to extract interface state parameters from the MIS parallel conductance technique

Dispersion and Absorption in Dielectrics I. Alternating Current Characteristics

Kenneth S. Cole, Robert H. Cole · The Journal of Chemical Physics · 1941 · 9.9K citations

Natural Sciences, Electrical Engineering, Materials Science +16

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 671 citations

Engineering, Electrical Engineering, Materials Science +17

DENSITY OF SiO2–Si INTERFACE STATES

Peter V. Gray, D.M. Brown · Applied Physics Letters · 1966 · 406 citations · Full text

Natural Sciences, Materials Science, Physics +10