Extreme ultraviolet lithography

Abstract

An extreme ultraviolet (EUV) lithography tool using 13.4 nm radiation is being developed by a consortium of integrated circuit (IC) manufacturers to support 100 nm imaging for integrated circuit production. The 4×, 0.1 NA alpha tool has a >1 μm depth of focus, all reflective optics, a xenon laser plasma source, and robust reflective masks. The technology is expected to support feature scaling down to 30 nm.