Advanced Materials · 1998 · 267 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film TransistorsAmorphous Silicon Thin-film TransistorsCarrier Transport In Organic SemiconductorsOrganic ElectronicsOrganic Field-effect TransistorsOrganic Thin-film TransistorsThin-film Transistor ModelingThreshold VoltageThreshold Voltage Modeling
The performance of organic field-effect transistors (OFETs) has improved substantially in recent years. Their field-effect mobilities are now comparable to that of hydrogenated amorphous silicon thin-film transistors (TFTs). Both TFTs and OFETs operate in the accumulation regime and the authors here develop a comprehensive model for OFETs in this regime. They show that, in the case of a constant mobility, a threshold voltage cannot be defined. The threshold voltage observed in practice is attributed to a gate-voltage-dependent mobility.