Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

Abstract

Monolithic InGaN-based light-emitting diodes (LEDs) using a light converter fully grown by metal organic vapor phase epitaxy are demonstrated. The light converter, consisting of 10–40 InGaN/GaN quantum wells, is grown first, followed by a violet pump LED. The structure and growth conditions of the pump LED are specifically adapted to avoid thermal degradation of the light converter. Electroluminescence analysis shows that part of the pump light is absorbed by the light converter and reemitted at longer wavelength. Depending on the emission wavelength of the light converter, different LED colors are achieved. In particular, for red-emitting light converters, a color temperature of 2100 K corresponding to a tint between warm white and candle light is demonstrated.