Applied Physics Letters · 1986 · 56 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous SemiconductorsAmorphous SolidsPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsSemiconductor Thin FilmsAmorphous Semiconductor FilmsAmorphous SiliconAmorphous Thin FilmsPosition-sensitive DetectionPosition-sensitive DetectorsSilicon DetectorsSilicon PhotodetectorsSuperlattice Materials
The lateral photoeffect in a new type of amorphous superlattice film, consisting of 6 Å of Ti and 13 Å of Si grown on a Si substrate, is discussed. The photovoltage varies extremely linearly with light spot position and can thus be used in accurate position sensitive detectors.
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Hirohiko Niu, Tetsuro Matsuda, H. Sadamatsu et al. · Japanese Journal of Applied Physics · 1976 · 44 citations
Structural characterization of Ti-Si thin-film superlattices
D. Brasen, R. H. Willens, S. Nakahara et al. · Journal of Applied Physics · 1986 · 18 citations
Natural Sciences, Materials Engineering, Materials Science +17