Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom

Abstract

A technology is presented that will allow the fabrication of thin III-V compound semiconductor layers of low dislocation density on silicon substrates. GaAs and InP wafers were successfully bonded to bare and oxidized silicon substrates in an experimental setup that produces a microcleanroom for bubble-free bonding in any environment. The bonding strength was found to be comparable to that of Si on oxidized Si and sufficient to subsequent grinding and polishing of the bonded wafers.