Microwave and Optical Technology Letters · 1991 · 15 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingHigh-frequency Semiconductor DevicesMicrowave OscillatorsQuantum TunnelingSemiconductor HeterostructuresSemiconductor PhysicsEquivalent Circuit ModelingEquivalent Series ResistanceHigh-frequency ElectronicsPower DensityResonant TunnelingResonant Tunneling DevicesSeries ResistanceTerahertz Semiconductor Devices
Abstract Advances in high‐frequency resonant‐tunneling‐diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In 0.53 Ga 0.47 As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped‐element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak‐to‐valley current ratio.
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Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
E. R. Brown, T. C. L. G. Sollner, C. D. Parker et al. · Applied Physics Letters · 1989 · 308 citations