Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

Abstract

A high pressure mercury arc lamp focused into a narrow ribbon beam has been used to recrystallize thin films of polysilicon deposited on thermally grown silicon dioxide. The recrystallized films contain grains that are typically 0.5–1 mm in width and several centimeters long. Surface texture measurements show the crystallites to be almost entirely 〈100〉 in the plane of the film with the orthogonal 〈100〉 direction closely paralleling the scan direction.