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Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
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1992
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Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied PhysicsTrap ConcentrationNoiseLow Frequency NoiseFirst CharacterisationMicroelectronicsOptoelectronicsGainp/gaas HeterointerfaceSemiconductor Device
The first characterisation of the low frequency noise performances of nonpassivated selfaligned GaInP/GaAs heterojunction bipolar transistors (HBT) is reported. The observed low frequency noise is smaller than for more classical GaAlAs/GaAs HBTs and is attributed to a reduced trap concentration at the GaInP/GaAs heterointerface.