IEEE Journal of Selected Topics in Quantum Electronics · 2014 · 82 citations · 30 references
EngineeringThin Film Process TechnologyImage BlurringPhotovoltaicsSemiconductorsOptical PropertiesSolar-blind PhotodetectorsThin Film ProcessingElectrical EngineeringThin-film FabricationOphthalmologyOptoelectronic MaterialsPhotoelectric MeasurementApplied PhysicsDifferent Oxygen ConcentrationHigh-temperature OperationPhotometry (Optics)Thin FilmsOptoelectronicsSolar Cell Materials
This paper demonstrates the high-temperature operation of fully transparent solar-blind deep ultraviolet (DUV) metal-semiconductor-metal (MSM) photodetectors (PDs) employing β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films with transmittance up to 80% from 400 to 900 nm without image blurring. Even at a bias up to 200 V, the β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MSM PDs show dark current as low as ~1 nA. The dark current of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MSM PDs under significantly different oxygen concentration in the ambiences are similar, indicating that the high inertness to surface effect. Moreover, the responsivity and the working temperature of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MSM PDs at 10 V bias are 0.32 mA/W and as high as 700 K, respectively. Full recovery after 700-K operation demonstrates reliability and robustness of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> PDs. The superior see-through features, electrical tolerance, inertness to surface effect, thermal stability, and solar-blind DUV photoresponse of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MSM PDs support the use in next-generation DUV PDs applications under harsh environments.
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Semiconductor ultraviolet detectors
Manijeh Razeghi, Antoni Rogalski · Journal of Applied Physics · 1996 · 1.4K citations
Ga2O3 films for electronic and optoelectronic applications
M. Passlack, E. Fred Schubert, W. S. Hobson et al. · Journal of Applied Physics · 1995 · 432 citations