Publication | Open Access
Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV
28
Citations
8
References
2001
Year
Electrical EngineeringEngineeringPhysicsReciprocal Space AnalysisApplied PhysicsCondensed Matter PhysicsQuantum MaterialsPower Semiconductor DeviceDielectric Function DataExtraordinary Dielectric FunctionsCarbideCritical Point EnergiesElectronic StructureSpectroscopic PropertySolid-state PhysicAb-initio Method
We report ordinary (ε⊥c axis) and extraordinary (ε∥c axis) dielectric function data of 4H– and 6H–SiC from 3.5 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are also compared to recently reported ab initio calculations. Critical point energies were found using real and reciprocal space analysis.
| Year | Citations | |
|---|---|---|
Page 1
Page 1