physica status solidi (b) · 2006 · 39 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportDefects In Electronic MaterialsDopingOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor DefectsChemical Vapor TransportDefect ComplexesDefect PhysicsN-type Oxide SemiconductorsPositron Annihilation SpectroscopyVacanciesVacancy ComplexesZinc Oxides
Abstract We have used positron annihilation spectroscopy to study the vacancy defects in ZnO crystals grown by both the conventional and contactless chemical vapor transport (CVT and CCVT). Our results show that Zn vacancies or Zn vacancy related defects are present in as‐grown ZnO, irrespective of the growth method. Zn vacancies are observed in CVT‐grown undoped ZnO and (Zn,Mn)O. The Zn vacancies present in undoped CCVT‐ZnO are the dominant negatively charged point defect in the material. Doping the material with As introduces also Zn vacancy‐related defect complexes with larger open volume. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
12
Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
Parmanand Sharma, Amita Gupta, K. V. Rao et al. · Nature Materials · 2003 · 1.8K citations
Electrical properties of bulk ZnO
D. C. Look, D. C. Reynolds, J. R. Sizelove et al. · Solid State Communications · 1998 · 859 citations
Natural Sciences, Materials Engineering, Materials Science +14
Filip Tuomisto, V. Ranki, K. Saarinen et al. · Physical Review Letters · 2003 · 460 citations · Full text