Applied Physics Letters · 2014 · 72 citations · 25 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsRadiation TransportGamma-ray SpectroscopyHigh-dose Radiation EffectsRadiation Damage In MaterialsRadiation ResistanceRadiation-resistant MaterialsX-ray Photoelectron SpectroscopyBond BreakingGamma Irradiation EffectsIonizing IrradiationRadiation EffectsRandom-access MemoryResistive Random-access MemoryStability DegradationTotal Ionizing Dose Effects
The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.
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Memristive devices for computing
J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology · 2012 · 3.8K citations
Engineering, Computer Engineering, Electrical Engineering +11
H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations