Runchen Fang

Low-Temperature Characteristics of HfO<sub><italic>x</italic></sub>-Based Resistive Random Access Memory

Runchen Fang, Wenhao Chen, Ligang Gao et al. · IEEE Electron Device Letters · 2015 · 116 citations

Semiconductors, Low-temperature Switching Characteristics, Electrical Engineering +15

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

Runchen Fang, Qingqing Sun, Peng Zhou et al. · Nanoscale Research Letters · 2013 · 111 citations · Full text

A CMOS-compatible electronic synapse device based on Cu/SiO₂/W programmable metallization cells

Wenhao Chen, Runchen Fang, Mehmet B. Balaban et al. · Nanotechnology · 2016 · 76 citations

Engineering, Integrated Circuits, Biomedical Engineering +17

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Runchen Fang, Y. Gonzalez Velo, Wenhao Chen et al. · Applied Physics Letters · 2014 · 71 citations

Materials Science, Electrical Engineering, Total Ionizing Dose +14

Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups

Yueqin Li, Yueying Chu, Runchen Fang et al. · Polymer · 2011 · 66 citations

Materials Science, Synthetic Macromolecule, Engineering +7