Publication | Closed Access
Removal of amorphous C and Sn on Mo:Si multilayer mirror surface in Hydrogen plasma and afterglow
47
Citations
15
References
2012
Year
EngineeringSilicon On InsulatorPlasma ProcessingC AtomsChemical EngineeringHydrogen PlasmaNanoelectronicsThin Film ProcessingMaterials ScienceMaterials EngineeringC Atoms RemovalSurface CharacterizationSurface AnalysisSurface ScienceApplied PhysicsH AtomsAmorphous CAmorphous SolidChemical Vapor Deposition
Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. Unlike for Sn, the removal mechanism for C atoms in the plasma is ion-stimulated and provides a much higher removal rate.
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