IEEE Transactions on Microwave Theory and Techniques · 1982 · 17 citations · 12 references
EngineeringElectrical EngineeringManufacturing EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsAnnealingImpatt DiodesLaser AnnealingMillimeter-wave Integrated CircuitsPower Conversion EfficiencySecondary Ion Mass SpectrometrySilicon WafersWafer Thinning
We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.
12