Applied Surface Science · 1992 · 40 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsSemiconductor Characterization
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Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
D. E. East̀man, T.‐C. Chiang, P. Heimann et al. · Physical Review Letters · 1980 · 337 citations