Journal of Applied Physics · 2009 · 15 citations · 13 references
SemiconductorsDevice ModelingElectrical EngineeringDifferent BranchesEngineeringHorizontal BranchesPhysicsVertical BranchNanoelectronicsElectronic EngineeringSemiconductor DeviceApplied PhysicsNonlinear Output CharacteristicsSemiconductor TechnologyMicroelectronicsCharge TransportInalas/ingaas-based Three-terminal Junctions
In this work, the influence of the geometry of the different branches on the output characteristics of InAlAs/InGaAs three-branch junctions is analyzed. At room temperature experimental measurements show that when increasing the width of the horizontal branches, the nonlinear behavior persists, even if less pronounced. This implies a reduction in the (typically high) impedance of these nanodevices, which is quite interesting in order to minimize the influence of parasitic capacitances on their cutoff frequency and to decrease the reflected power due to the mismatch with the 50 Ω standard equipment. The width of the vertical branch is also a relevant parameter, nonlinear effects being more important for narrow branches. In both cases surface charges at the etched boundaries of the branches play a key role. Monte Carlo simulations (performed with a self-consistent surface charge model recently proposed by the authors) are used to explain the physical origin of the observed behavior and to improve the device performance. We focus on the enhancement of their efficiency as a way to develop their promising functionalities in various analog and digital circuits.
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Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions
Ivan Shorubalko, H. Q. Xu, Ivan Maximov et al. · Applied Physics Letters · 2001 · 139 citations
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
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Microscopic modeling of nonlinear transport in ballistic nanodevices
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