Investigation of the reliability of 4H–SiC MOS devices for high temperature applications - Concepedia

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Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

46

Citations

24

References

2011

Year

Martin Le-Huu, H. Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, L. Frey, H. Ryssel

Microelectronics Reliability

Electrical EngineeringMos DevicesEngineeringBias Temperature InstabilityHigh Temperature ApplicationsPower Semiconductor DeviceDevice ReliabilityMicroelectronicsPower Electronic Devices

References

	Year	Citations

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