Studies of charge carrier trapping and recombination processes in Si∕SiO2∕MgO structures using second-harmonic generation

Abstract

Effects of MgO deposition on Si∕SiO2 system and charge carrier trapping and recombination in Si∕SiO2∕MgO structures are studied using second-harmonic generation (SHG). An ultrafast 800nm laser was used both for multi-photon induced electron injection through the SiO2 into a potential well in the MgO, and for monitoring the time-dependent SHG signal, which is sensitive to the electric field at the Si∕SiO2 interface. Our results indicate that the MgO deposition introduces new trap states, and electrons trapped in the MgO transport more readily through the SiO2 than those in traps on the surface of SiO2. We attribute this to differences in trap energy levels and/or differences in process damage-induced defect densities in the SiO2.