Cu-doping of ZnO by nuclear transmutation

Abstract

Zinc oxide single crystals were doped with copper acceptors by means of the nuclear transmutation doping method, which gives highly uniform dopant distributions and has a much higher probability of controlling the dopant locations in the lattice. The Cu doping was confirmed by the infrared absorption signature of Cu2+ at 5780 cm−1. Hall-effect measurements were performed to study the effect of CuZn on the electrical properties of ZnO. These measurements indicated that the Cu acceptor level lies 0.160 eV below the conduction-band minimum.