Concepedia

High power, low threshold, singlemode 630 nm laser diodes

R.S. Geels, David Welch, D. R. Scifres, D. P. Bour, D.W. Treat, R. D. Bringans

Electronics Letters · 1992 · 19 citations · 5 references

Abstract

Output powers exceeding 45 mW under room temperature, continuous wave operation and threshold currents as low as 30 mA are demonstrated in singlemode AlGaInP visible laser diodes emitting at 636 nm. Singlemode operation is maintained at output powers exceeding 40 mW.

References

5

High temperature (≳150 °C) and low threshold current operation of AlGaInP/Ga<i>x</i>In1−<i>x</i>P strained multiple quantum well visible laser diodes

T. Katsuyama, Ichiro Yoshida, J. Shinkai et al. · Applied Physics Letters · 1991 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

1W CW, 672 nm visible laser diodes

H. B. Serreze, C.M. Harding, R. G. Waters · Electronics Letters · 1991 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

3 W CW laser diodes operating at 633 nm

R.S. Geels, D. P. Bour, D.W. Treat et al. · Electronics Letters · 1992 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

Hiroki Hamada, M. Shono, S. Honda et al. · Electronics Letters · 1991 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Stable 30mW operation at 50°C for strained MQW AlGaInP visible laser diodes

Yuichiro Ueno, H. Fujii, H. Sawano et al. · Electronics Letters · 1992 · 14 citations

Engineering, Electrical Engineering, Materials Science +17