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1W CW, 672 nm visible laser diodes
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1991
Year
SemiconductorsPhotonicsElectrical EngineeringVisible Laser DiodesEngineeringSemiconductor TechnologySemiconductor LasersOptoelectronic MaterialsApplied PhysicsLaser ApplicationsGainp Strained-layerLaser MaterialMultilayer HeterostructuresOptoelectronic DevicesStripe DiodeOptoelectronicsCompound Semiconductor
Visible laser diodes emitting at 672 nm and employing a GaInP strained-layer, single quantum well, graded-index separate confinement heterostructure (GRINSCH) design have been fabricated. CW output power in excess of 1 W and CW threshold current density as low as 305 A/cm2 were obtained from a coated, 60 μm wide oxide stripe diode operating at 10°C.