Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP - Concepedia

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Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP

38

Citations

13

References

1991

Year

T. J. de Lyon, N.I. Buchan, P. D. Kirchner, J. M. Woodall, D. T. McInturff, G. Scilla, F. Cardone

Journal of Crystal Growth

Materials ScienceEngineeringCarbon DopingApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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