Semiconductor Science and Technology · 1988 · 10 citations · 11 references
Natural SciencesMaterials EngineeringMaterials SciencePlasma PhysicsSemiconductor DevicesSurface ScienceHigh-temperature PlasmasOxide SemiconductorsPlasma DiagnosticsPlasma Surface TreatmentPlasma-surface InteractionsSilicon MaterialsGas Pressure EffectsPlasma Material ResponsePlasma TreatmentPlasma-facing MaterialsPlasma-induced DamagePlasma-induced Surface DamagePower DensitySilicon-on-insulator Technology
Experiments are presented that suggest that the effect of hydrogen plasma on the properties of Si-SiO2 structures depends on the initial parameters of the structures. Measurements of the inversion channel mobility and of the interface properties of the structures show that the soft H2 plasma (RF power density: 0.1 W cm-2; gas pressure: 133 Pa) causes a degradation of the original dry-thermal-oxide Si-SiO2 structures and anneals structures that have been strongly damaged by previous argon plasma treatment.
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