Structural and electrical profiles for double damage layers in ion-implanted silicon

Abstract

(111) Si specimens were implanted at room temperature with 5 × 1014 cm−2, 120 keVP+ ions, and annealed at 950°C. Transmission electron-microscope cross-section specimens revealed two discrete damage layers at depths of 95 and 190 nm. Electrical profiles showed decreases in carrier concentration and/or mobility at these two depths.