Applied Physics Letters · 2009 · 42 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ReliabilityDielectricsElectric CircuitsSemiconductor ReliabilityCapacitorsCurrent-voltage RelationsDielectric BreakdownElectrical BreakdownResistive SwitchingResistive Switching MaterialsTime-dependent Dielectric BreakdownVoltage
Time-dependent electroforming phenomena in NiO capacitors are investigated. Different current-voltage characteristics between dc sweep mode and pulse mode indicate that electroforming is time-dependent process. Statistical time-dependent dielectric breakdown (TDDB) measurements show the exponential dependence of electroforming time on applied voltage, confirming that forming process is not a spontaneous process at some critical voltage, but an upsurge process resulting from stress-induced defects. The statistical TDDB analysis explains not only the nature of electroforming process but also the anomalous forming and large variations in forming parameters.
13
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre
Jonathan E. Green, Jang Wook Choi, Akram Boukai et al. · Nature · 2007 · 1.2K citations
Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Natural Sciences, Electrical Engineering, Materials Science +17
Reproducible resistance switching in polycrystalline NiO films
Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations
Natural Sciences, Materials Engineering, Materials Science +16