Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sources

Abstract

A novel method is described for measuring the carrier lifetimes in double heterostructure light-emitting diodes (LED’s) and lasers. The improved resolution of the technique permits the first reported measurement of the carrier dependence of the radiative recombination coefficient. The technique also provides a reliable measurement of the active region doping level which is in very good agreement with the values calculated from the composition of the growth solutions.