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Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−<i>x</i>In<i>x</i>As/GaAs on GaAs quantum wells
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1985
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Wide-bandgap SemiconductorOptical MaterialsEngineeringSemiconductorsOptical PropertiesQuantum MaterialsGa0.47in0.53al/al0.48in0.52as Quantum WellsLayer SuperlatticesMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorPhysicsCrystalline DefectsOptoelectronic MaterialsCategoryiii-v SemiconductorGaas Quantum WellsApplied PhysicsCondensed Matter PhysicsOptoelectronics
We have studied Ga0.47In0.53Al/Al0.48In0.52As quantum wells grown by molecular beam epitaxy (MBE). The smoothing effect of a Ga0.47In0.53As buffer layer results in narrow linewidth. Strained layer superlattices of Ga0.85In0.15As/GaAs exhibit excitonic transition at 77 and 300 K as seen by absorption measurement. A model is proposed to explain the different energy transitions.