A. M. Jean‐Louis

Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

G. Danan, B. Etienne, F. Mollot et al. · Physical review. B, Condensed matter · 1987 · 214 citations

Semiconductors, Optical Evidence, Type-ii Superlattice Transition +15

Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition

P. Blanconnier, M. Cerclet, P. Hénoc et al. · Thin Solid Films · 1978 · 92 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +7

Growth of InSb1-xBix single crystals by Czochralski method

B. Joukoff, A. M. Jean‐Louis · Journal of Crystal Growth · 1972 · 80 citations

Materials Science, Materials Engineering, Insb1-xbix Single Crystals +7

High-purity ZnSe obtained by metalorganic chemical vapor deposition epitaxy

P. Blanconnier, J. F. Hogrel, A. M. Jean‐Louis et al. · Journal of Applied Physics · 1981 · 70 citations

Optical Materials, Engineering, Chemical Deposition +16

Measurements of pure CO₂ absorption at high densities near 2.3 μm

C. Brodbeck, Van-Thanh Nguyen, J.‐P. Bouanich et al. · Journal of Geophysical Research Atmospheres · 1991 · 29 citations

Exoplanet Atmosphere, Engineering, High Densities +17