Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications - Concepedia

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Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

19

Citations

13

References

2008

Year

Massimo Longo, O. Salicio, Claudia Wiemer, Roberto Fallica, Alessandro Molle, M. Fanciulli, C. Giesen, B. Seitzinger, P. K. Baumann, M. Heuken,

Journal of Crystal Growth

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringCrystal Growth TechnologyApplied PhysicsGrowth StudyChemistryChemical Vapor DepositionNon-volatile Memory Applications

References

	Year	Citations

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