Initial growth stage of InAs/GaAs studied by RHEED-TRAXS method

Proposal for strained type II superlattice infrared detectors

D. L. Smith, C. Mailhiot · Journal of Applied Physics · 1987 · 706 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

In1−<i>x</i>Ga<i>x</i>As-GaSb1−<i>y</i>As<i>y</i> heterojunctions by molecular beam epitaxy

H. Sakaki, L. L. Chang, R. Ludeke et al. · Applied Physics Letters · 1977 · 201 citations

Semiconductors, Materials Science, Downward Bowing +13

Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

W. J. Schaffer, Morten Lind, S. P. Kowalczyk et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 151 citations

Materials Science, Semiconductors, Engineering +13

Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)

Shuji Hasegawa, Shozo Ino, Youiti Yamamoto et al. · Japanese Journal of Applied Physics · 1985 · 127 citations

X-ray Spectroscopy, Engineering, Chemical Analysis +16

Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE

C. T. Foxon, B.A. Joyce · Journal of Crystal Growth · 1978 · 115 citations

Materials Science, Materials Engineering, Epitaxial Growth +8