Microstructure, dielectric properties and hydrogen gas sensitivity of sputtered amorphous Ba0.67Sr0.33TiO3 thin films

NANO-phase SBT-family ferroelectric memories

J. F. Scott, Marin Alexe, N. D. Zakharov et al. · Integrated ferroelectrics · 1998 · 444 citations

Materials Science, Semiconductors, Electrical Engineering +15

Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories

G. Dietz, M. Schumacher, Rainer Waser et al. · Journal of Applied Physics · 1997 · 339 citations

Non-volatile Memory, Engineering, Chemical Deposition +17

High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

A. I. Kingon, S. K. Streiffer, C. Basceri et al. · MRS Bulletin · 1996 · 228 citations

Dynamic Random-access Memories, Electrical Engineering, Engineering +6

Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors

S. Aggarwal, S. R. Perusse, C. W. Tipton et al. · Applied Physics Letters · 1998 · 200 citations

Materials Science, Gas Anneals, Engineering +11

Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films

Jin‐Ping Han, T. P. · Applied Physics Letters · 1997 · 143 citations

Materials Science, Chemical Engineering, Oxygen Annealing +14