NANO-phase SBT-family ferroelectric memories

Abstract

Abstract Recent studies have produced 0.1 × 0.1 μm ferroelectric cells in both bismuth titanate and strontium bismuth tantalate, thus taking thin-film ferroelectric memories into the regime of nanoscale (100 nm or less) devices. A review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.