Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

R. León, Yong Kim, C. Jagadish et al. · Applied Physics Letters · 1996 · 262 citations

Engineering, Materials Science, Physics +16

Structural and electronic properties of low dielectric constant fluorinated amorphous carbon films

Yanjun Ma, Hongning Yang, Jinghua Guo et al. · Applied Physics Letters · 1998 · 119 citations

Natural Sciences, Materials Science, Physics +16

Thermal relaxation of pseudomorphic Si-Ge superlattices by enhanced diffusion and dislocation multiplication

Subramanian S. Iyer, F. K. LeGoues · Journal of Applied Physics · 1989 · 91 citations

Engineering, Materials Science, Physics +17

The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells

Sang-Wan Ryu, In Kim, Byung-Doo Choe et al. · Applied Physics Letters · 1995 · 71 citations

Engineering, Electrical Engineering, Materials Science +17

High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures

A. Krost, F. Heinrichsdorff, D. Bimberg et al. · Applied Physics Letters · 1996 · 67 citations · Full text

Natural Sciences, Materials Science, Physics +17