Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 29 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceNanotechnologySemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationInterconnect TechnologyNanoelectronicsSemiconductor HeterostructuresHeterostructure DevicesInterconnect FabricationMultilevel InterconnectsNanoelectronic DevicesNanofabrication Of Nanoelectronic DevicesNanostructuresSemiconductor NanostructuresSilicon Nitride
The fabrication of a submicron-sized dot, defined by surface gates on a GaAs/AlGaAs heterostructure, is described. Within the dot, a voltage applied to a 200 nm diam central electrode changes the geometry to that of a ring. Contact to the central electrode was achieved using a layer of silicon nitride as an interlevel insulator. This multilayer architecture is presented as a demonstration of an interconnect technique, featuring alignment to within 10 nm, which may be used to link similar discrete nanostructures to form a circuit.