High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in  N 2 O

Abstract

Ultrathin metal‐oxide‐semiconductor (MOS) gate dielectrics have been fabricated by conventional thermal oxidation of Si in pure ambient. Electrical results show that gate dielectrics prepared by this method exhibit comparable fixed charge density compared to control , but significantly reduced interface state generation and charge trapping under constant current stressing. A nitrogen incorporation at the interface is observed and suggested to be responsible for the improved characteristics.