Theoretical calculation for a ZnSe-Ge(110) heterojunction with an ultrathin intralayer

Abstract

We present a consistent tight-binding calculation of the ZnSe-Ge(110) heterojunction with an Al monolayer between the two semiconductors. Our results are in reasonable agreement with the experimental evidence found by Niles et al., showing that an ideal interface is an adequate model to explain the interface behavior. The shift in the valence-band offset due to the Al intralayer is interpreted as a shift in the difference between the charge-neutrality levels of both semiconductors, induced by the deposited intralayer.