Applied Physics Letters · 1991 · 30 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesPhotonic Integrated CircuitsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringTwo-dimensional SemiconductorsDevice FabricationDifferential Quantum EfficiencyHeterostructure DevicesIon Beam EtchingLow-threshold Current LasersSemiconductor Laser DiodesSemiconductor Laser FabricationStrained Layer Structures
Monolithic two-dimensional surface-emitting arrays of strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode lasers have been fabricated and operated pulsed with low-threshold current densities and differential quantum efficiencies greater than 50%. The InGaAs/AlGaAs arrays emit at 1.03 μm, while the AlInGaAs/AlGaAs arrays emit at 0.815 μm. Thus, it should be possible to fabricate monolithic arrays with comparable performance over a wide wavelength range. The individual lasers of the arrays are horizontal folded-cavity devices with two 45° internal reflectors and two top-surface facets. The design is simple to implement using optical pattern-generator masks, optical projection printing, and chlorine ion-beam-assisted etching in key fabrication steps.
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