Resonant periodic gain surface-emitting semiconductor lasers

Abstract

A surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain medium length, and enhanced gain at a specific design wavelength is described. The active region consists of a series of quantum wells spaced at one half the wavelength of a particular optical transition in the quantum wells. This special periodicity allows the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the frequency selectivity, increasing the gain in the vertical direction by a factor of two compared to a uniform medium or a nonresonant multiple quantum well, and substantially reducing amplified spontaneous emission. Optically pumped lasing was achieved in a GaAs/AlGaAs structure grown by molecular-beam epitaxy, with what is believed to be the shortest gain medium (310 nm) ever reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>