G. D. Johnson

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Publications

Citations

176

H-Index

Active since

1986

Affiliations

Massachusetts Institute of Technology(Current)

MIT Lincoln Laboratory

G. D. Johnson is an author at Massachusetts Institute of Technology specializing in materials science, semiconductor devices, and electrical engineering.

Publications per year

1986–1994

Publications

Dry etching induced damage on vertical sidewalls of GaAs channels

S. W. Pang, W. D. Goodhue, T. M. Lyszczarz et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 57 citations

Engineering, Electrical Engineering, Materials Science +13

Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies

W. D. Goodhue, J.P. Donnelly, C. A. Wang et al. · Applied Physics Letters · 1991 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Monolithic two-dimensional GaAs/AIGaAs laser arrays fabricated by chlorine lon-beam-assisted micromachining

W. D. Goodhue, K.A. Rauschenbach, C. A. Wang et al. · Journal of Electronic Materials · 1990 · 27 citations

Engineering, Electrical Engineering, Materials Science +14

Quantum-well charge-coupled devices for charge-coupled device-addressed multiple-quantum-well spatial light modulators

W. D. Goodhue, Barry E. Burke, K. B. Nichols et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 21 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Quantum well GaAs/AlGaAs shallow-donor far-infrared photoconductors grown by molecular-beam epitaxy

W. D. Goodhue, E. R. Mueller, David M. Larsen et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

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